 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDG6317NZ January 2004 FDG6317NZ Dual 20v N-Channel PowerTrench(R) MOSFET General Description This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features * 0.7 A, 20 V. RDS(ON) = 400 m @ VGS = 4.5 V RDS(ON) = 550 m @ VGS = 2.5 V * ESD protection diode (note 3) * Low gate charge * High performance trench technology for extremely low RDS(ON) * Compact industry standard SC70-6 surface mount package Applications * DC/DC converter * Power management * Loadswitch S G D D G Pin 1 S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 12 (Note 1) Units V V A W C 0.7 2.1 0.3 -55 to +150 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 C/W Package Marking and Ordering Information Device Marking .67 Device FDG6317NZ Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2004 Fairchild Semiconductor Corporation FDG6317NZ Rev B (W) FDG6317NZ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS IGSS TA = 25C unless otherwise noted Parameter Test Conditions Min 20 Typ Max Units V Off Characteristics Drain-Source Breakdown VGS = 0 V, ID = 250 A Voltage Breakdown Voltage Temperature ID = 250 A, Referenced to 25C Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V Gate-Body Leakage Gate-Body Leakage (Note 2) 13 1 10 1 mV/C A A A VGS = 12 V, VDS = 0 V VGS = 4.5 V, VDS = 0 V ID = 250 A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, 0.6 1.2 -2 300 450 390 1.5 V mV/C ID = -250 A, Referenced to 25C VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 4.5 V, VDS = 5 V, ID = 0.7 A ID = 0.6 A ID = 0.7 A, TJ=125C VDS = 5 V ID = 0.7 A 400 550 560 m ID(on) gFS 1 1.8 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 66.5 19 10 5.8 pF pF pF VGS = 15 mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 5.5 7 7.5 2.5 11 15 15 5 1.1 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 0.7 A, 0.76 0.18 0.20 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 0.7 A, IS = 0.25 A (Note 2) 0.25 0.8 8.3 1.2 1.2 A V nS nC diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. RJA = 415C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDG6317NZ Rev B (W) FDG6317NZ Typical Characteristics 2 VGS = 10V ID, DRAIN CURRENT (A) 4.5V 1.5 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 2.5V 1.7 VGS = 2.5V 1.5 1 1.3 3.0V 3.5V 4.0V 2.0V 0.5 1.1 4.5V 6.0V 10V 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0.9 0 0.5 1 ID, DRAIN CURRENT (A) 1.5 2 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o ID = 0.7A VGS =10V ID = 0.35A 0.8 0.6 TA = 125oC 0.4 TA = 25oC 0.2 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 2 VDS = 5V ID, DRAIN CURRENT (A) 1.5 25oC 1 IS, REVERSE DRAIN CURRENT (A) TA = 125 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -55oC VGS = 0V 1 TA = 125oC 0.1 25 C 0.01 -55oC 0.001 o 0.5 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6317NZ Rev B (W) FDG6317NZ Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 0.7A 4 10V 3 CAPACITANCE (pF) 100 VDS = 5V 15V f = 1MHz VGS = 0 V 75 Ciss 50 2 Coss 25 1 Crss 0 0 0.2 0.4 0.6 0.8 1 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 100s 1 1s 0.1 VGS = 10V SINGLE PULSE RJA = 415oC/W TA = 25 C 0.001 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o Figure 8. Capacitance Characteristics. 10 SINGLE PULSE RJA = 415C/W TA = 25C 1ms 10ms 100m DC 8 6 4 0.01 2 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t)*RJA RJA = 415C/W 0.1 0.05 0.02 0.01 SINGLE PULSE 0.2 0.1 P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDG6317NZ Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8 |
Price & Availability of FDG6317NZ
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |